· Film:  SiC Epi film with 3C structure grown by PECVD

· Thickness: 1.26 micron  +/- 10%   (can be grown up to 20 micron th; the price would be increased with the requested film thickness)

· Orientation: 3C SiC (100)

· Surface: CMP  ( film chemical mechanical polished ) on both sides with Ra < 5="">

· Target doping level:  < 1.0e16="">

· Type and dopant:  N type, Undoped

· Surface defects density (microscopic inspection of crystallites or other macro-defects) <=>

· Silicon substrate:    

· Size: 10mm x 10mm x 0.525 mm thickness 

· Orientation: (100)

· Type:  P type / B doped  ( N type is available as well) 

· Resistivity: 1- 5 ohm.cm

· Polish: one side polished