·         Cu coated Si Wafer (4 inch size)

·         Thickness of  highly oriented polycrystalline Cu <111> film: 400 nm

·         4 inch dia x0.525 mm thickness Si wafer (Prime Grade) 

·         P type, B doped, <100> orientation, SSP

·         Resistivities: 1-20 ohm-cm

·         Surface Roughness:   as grown , N/A

·         Package: One 1000 class clean room with 100 class plastic bag