技術(shù)規(guī)格
擊穿電壓Vce Breakdown Voltage Vce | 25V |
集電極電流 Maximum Collector Current | 0.3A |
晶體管增益hFE Transistor Gain hFE | 2,000 |
功率 Power | 0.6W |
帶寬 Bandwidth | 250MHz |
結(jié)電容 Junction Capacitance | 250pf |
詳細(xì)描述
適用于放大器和應(yīng)用的超高增益晶體管,也可用于替代某些需要低飽和電壓的達(dá)林頓晶體管。
Ultra high gain transistor suitable for amplifier and muting applications that can also be used to replace some darlingtons where low saturation voltage is desirable.
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